AFT05MS031NR1 AFT05MS031GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 520 MHz
0
0
25
123456
20
5
15
10
30
P
out
, OUTPUT POWER (WATTS)
f = 520 MHz
VDD
= 12.5 Vdc
Pin
=0.3W
VDD
= 13.6 Vdc, Pin
=0.3W
VDD
= 12.5 Vdc, Pin
=0.6W
VDD
= 13.6 Vdc, Pin
=0.6W
35
40
50
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
Pin, INPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
11
14
12
0.03 30.1
1
Gps
40
60
50
10
30
17
16
15
18
70
80
90
?
D
, DRAIN EFFICIENCY (%)
Pout
VDD
= 13.6 Vdc, IDQ
=10mA
f = 520 MHz
19
20
0
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
45
20
P
out
, OUTPUT POWER (WATTS)
13
?D
VDD
= 13.6 Vdc, IDQ
=10mA,Pout
=31WAvg.
f
MHz
Zsource
?
Zload
?
520
0.72 + j1.77
1.54 + j0.80
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
50
?
50
?
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